Prof Peter M Smowton
Interests include the design, fabrication and characterisation of optoelectronic devices. Current research topics include quantum dot lasers , high power emitters for photodynamic therapy and the physics of InGaN light emitting devices. I am also interested in optoelectronic integration of materials and functions (see Functional Material and Integration). This involves the exploration of the physics of the light matter interactions in these materials and devices.
Measures of Esteem
I currently Co-Chair the Novel-In-Plane Lasers Conference, Photonics West, San Francisco, am general co-chair for CLEO Science and Innovation 2015, San Jose, having been program co-chair in 2013 and chair of the semiconductor laser subcommittee for CLEO 2010 and 2011. I am also a voting member of CLEO steering. I served as general chair for theInternational Semiconductor Laser conference held in Palma, Mallorca and was program chair for the 2012 ISLC held in San Diego.
I am also involved in the organisation of a number of other UK based meetings, workshops and conferences including the annual meeting UK Semiconductors and Semiconductor Integrated Optoelectronics, which has been held in Cardiff since 1986. I serve on the program committees of a number of additional international conferences such as CLEO Pacific Rim and the International Photonics Conference (IPC).
I am a member of the editorial board of IOP Semiconductor Science and Technology and IET-Optoelectronics and have edited 2 special issues of the IEE Proceedings - Optoelectronics on Semiconductor Optoelectronics in 2001 and 2006, 3 special issues of IET - Optoelectronics in 2007, 2008 and 2009, co-edited an issue of IEEE Journal of Selected Topics in Quantum Electronics on "Solid State Lighting" in 2009 and co-edited SPIE vols 6909, 7230, 7616, 7953, 8277 and 8640 on "Novel In-Plane Semiconductor Lasers" in 2008, 2009, 2010, 2011, 2012 and 2013.
Forthcoming and Recent Invited International Conference Talks:
“InP Quantum dot lasers - materials and device properties” ICOOPMA, Leeds 2014
"Physics and Applications of Quantum Dot Lasers", Tutorial, CLEO, San Jose. May 2012
"Quantum Dot Lasers - The Role of the 2D States", Photonics Conference, Arlington, Virginia. October 2011
"Many body effects and the role of the carrier distribution in InAs/GaAs quantum dot laser structures", VCIAN, Las Vegas, Nevada. April 2011
“InP/AlGaInP Quantum Dot Lasers emitting in the 7xx nm wavelength band", Workshop on Semiconductor Lasers, Kyoto, Japan. Sept. 2010
“Low threshold InP Quantum Dot Lasers emitting in the 7xx nm band", 14th International Conference "Laser Optics 2010", St.Petersburg, Russia, June 2010
"InP / AlGaInP Quantum Dot, 690-750nm Emission Wavelength, Lasers”, 9th IEEE International Conference on Nanotechnology, Genoa, Italy July 2009
“InP/AlGaInP Quantum Dot Lasers”, E-MRS 2009 Spring Meeting, Strasbourg, France, June, 2009
I am treasurer of the IEEE Photonics Society and an ex-member of the Board of Governors, a fellow of OSA and a member of the SPIE and the Institute of Physics .
I am currently module organiser for PX3243 "Laser Physics and Non-linear Optics" and also teach on PX3144 "Electromagnetic Radiation Detection".
I also take 1st and 2nd year tutorials and supervise 3rd and 4th year projects.
Other recent modules include:
PX2107 "Electronics and Instrumentation" PX2108 "Topics in Physics"
PX3226 "Physics of Semiconductor Devices"
PX1217 "Investigative Physics II" and
PX0202 "Electricity, Magnetism and Light
I am a member of the School Management Team and the School Board and Chair the School Research Committee. I am currently supervisor for four research associates
Selected Recent Publications
"InP quantum dot lasers with temperature insensitive operating wavelength",
S. Shutts, P.M. Smowton, A.B. Krysa,
Applied Physics Letters, 103(6) 061106 DOI: 10.1063/1.4817732 (2013)
“The effect of strained conﬁnement layers in InP self-assembled quantum dot material”,
Stella N Elliott, Peter M Smowton, Andrey B Krysa and Richard Beanland
Semicond. Sci. Technol. 27 094008 (2012) doi:10.1088/0268-1242/27/9/094008
“Catastrophic optical bulk damage in InP 7xx emitting quantum dot diode lasers”,
S.N Elliott, M. Hempel, U. Zeimer, P. M. Smowton and J. W. Tomm,
Semicond. Sci. Technol. 27 102001 (2012) doi:10.1088/0268-1242/27/10/102001
Effect of proton bombardment on InAs dots and wetting layer in laser structures,
I. O’Driscoll, P. Blood, P. M. Smowton, A. Sobiesierski, and R. Gwilliam,
Applied Physics Letters 100, 261105 (2012), doi/10.1063/1.4730964
Quantum-Dot Lasers: Physics and Applications,
A. Sobiesierski and P.M. Smowton
in Comprehensive Semiconductor Science and Technology, Eds. P. Bhattacharya, R. Fornari and H. Kamimura,
volume 6 pp. 353-384 Elsevier, Amsterdam (2011)
Temperature-Dependent Threshold Current in InP Quantum-Dot Lasers,
P. M. Smowton, S.N. Elliott, S. Shutts, M. S. Al-Ghamdi, and A. B. Krysa,
IEEE Journal of Selected Topics in Quantum Electronics,
Vol. 17, no. 5, pp. 1343-1348. (2011)
Quantum Dot Lasers: Theory and Experiment
P.M. Smowton and P. Blood
in VLSI Micro and Nanophotonics" Eds. E-H Lee, L.A. Eldada, M. Razeghi, C. Jagadish
pp9-1 - 9-35. CRC Press, Boca Raton(2010)
Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast
Philipp Ridha, Lianhe Li, Meletios Mexis, Peter M. Smowton, Janusz Andrzejewski, Grzegorz Sek, Jan Misiewicz, Eoin P. O'Reilly, Gilles Patriarche, Andrea Fiore,
IEEE Journal of Quantum Electronics, 46 (2), pp.197-204 (2010)
Nonradiative recombination in 1.56 µm GaInNAsSb/GaNAs quantum-well lasers
J. W. Ferguson, P. M. Smowton, P. Blood, H. Bae, T. Sarmiento, and J. S. Harris, Jr.
Applied Physics Letters 95, 231104 (2009)
Control of polarization and dipole moment in low-dimensional semiconductor nanostructures,
L. H. Li (李联合), M. Mexis, P. Ridha, M. Bozkurt, G. Patriarche, P. M. Smowton, P. Blood, P. M. Koenraad, and A. Fiore,
Applied Physics Letters 95, 221116 (2009)
Low-Temperature Nonthermal Population of InAs-GaAs Quantum Dots
Ian O'Driscoll, Peter M. Smowton and Peter Blood,
IEEE Journal of Quantum Electronics, 45 (4), pp.380-387 (2009)
Invited Paper: “Origin of Temperature-Dependent Threshold Current in p-Doped and Undoped In(Ga)As Quantum Dot Lasers”,
P.M Smowton, A.A. George, I.C. Sandall, M. Hopkinson, H.-Y. Liu,
IEEE Journal of Selected Topics in Quantum Electronics, 14 (4) pp.1162-1170 (2008)
Nonradiative Recombination in Multiple Layer In(Ga)As Quantum-Dot Lasers,
I.C. Sandall, P.M. Smowton, H-Y. Liu, M. Hopkinson,
IEEE Journal of Quantum Electronics, 43, 8, pp. 698-703 (2007)
Polarization response of quantum confined structures using edge-photovoltage spectroscopy,
M. Mexis, P. Blood and P.M. Smowton,
Semiconductor Science and Technology 22, pp. 1298-1301 (2007)
Optical Gain and Spontaneous Emission in GaAsSb–InGaAs Type-II “W” Laser Structures,
J.D. Thomson, P.M. Smowton, P. Blood, J.F. Klem,
IEEE Journal of Quantum Electronics, 43, 7, pp. 607-613 (2007)
Long wavelength quantum-dot lasers selectively populated using tunnel injection
A.A. George, P.M. Smowton, Z. Mi, P. Bhattacharya
Semiconductor Science and Technology 22 (5), art. no. 018, pp. 557-560,(2007)
A more complete list of recent publications(computer generated) follows: