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Physics Seminar

Integrated Crystal Growth of Advanced Nanomaterials: from model systems to integrated manufacturing

Speaker: Prof. Stephan Hofmann (University of Cambridge)
Date: Wednesday 13 March 2019
Time: 15:00
Venue: Queens Buildings N/3.28

With a focus on diverse applications in the electronics and display industry, we aim at developing integrated process technology for nanomaterials, like semiconducting nanowires, 2D materials and their heterostructures [1]. In order to go beyond empirical process calibrations, we systematically use in-situ metrology to reveal the mechanisms that govern the growth, interfaces and device behaviour of these nanomaterials in realistic process environments. I will review our recent progress in scalable CVD [1] and device integration approaches of highly crystalline graphene and hexagonal boron nitride (h-BN) films [2-4]. We systematically explored also the parameter space of atomic layer deposition (ALD) of ultrathin oxides on 2D materials [5] and as we show, these results have model system character for rational 2D/non-2D material process integration [6]. The talk will also cover our recent results [7-10] on group IV and III-V nanowire growth, revealing some of the fundamental growth mechanisms and highlighting the use of these structures as model systems to explore generic aspects of phase behaviour, nucleation and interface dynamics in nanoscale systems.

[1] Hofmann et al., J. Phys. Chem. Lett. 6, 2714 (2015).
[2] Weatherup et al., Nano Lett. 16, 6196 (2016).
[3] Wang et al., ACS Nano, asap (2019).
[4] Caneva et al. Nano Lett. 16, 1250 (2016).
[5] Aria et al. ACS Appl. Mater. Interfaces 8, 30564 (2016).
[6] Alexander-Webber et al., 2D Mater. 4, 011008 (2016).
[7] Panciera et al., Nature Materials 14, 820 (2015).
[8] Jacobsson et al. Nature 531, 317 (2016).
[9] Panciera et al. Nature Comm. 7, 12271 (2016).
[10] Panciera et al. Adv. Mater. 31, 1806544 (2019).