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Physics Seminar

Advanced semiconductor nanostructures and studies on surface passivation and morphology modification

Speaker: Prof. Martin Eickhoff, Prof. Jens Falta (University of Bremen)
Date: Wednesday 12 June 2019
Time: 15:00
Venue: Queens Buildings N/3.28

In the first part we will comment on the properties of MBE-grown group III-nitride nanowire heterostructures. We will discuss the influence of lateral and axial internal electric fields on their optical characteristics and present various approached to probe the strength of axial internal electric fields by bias-dependent single nanowire micro-photoluminescence. We also demonstrate the realization of GaN quantum wires with diameters below 5 nm by a second order self-assembled growth process and give an overview on their optical emission characteristics. In the second part of this presentation we will report on growth studies of a wide variety of semiconductor systems, ranging from germanium-silicon epitaxy, over wide band gap semiconductors to organic thin films, like PTCDA. Additional adsorbates have been investigated for their versatile impact on growth and surface morphology modification. These experiments have been performed using a variety of structural and chemical sensitive surface science tools including low-energy electron microscopy (LEEM) and synchrotron radiation spectroscopy (XSW, XPEEM, NEXAFS).