Physics Seminars
Charge carrier mobility in high-purity diamond
Speaker: Prof. Nobuko Naka (Kyoto University, Japan)
Date: Tuesday 30 June 2026
Time: 16:00
Venue: N/3.28
Charge carrier mobility is an essential parameter in the design of electronic devices. High-purity diamond without impurity doping has recently been recognized as a material showing the highest electron and hole mobilities among bulk semiconductors [1,2]. I will review comparative studies of intrinsic carrier mobility in diamond, measured using various types of cyclotron resonance, time-of-flight, and charge collection methods [3,4]. References [1] K. Konishi, I. Akimoto, H. Matsuoka, J. Isberg, and N. Naka, Intrinsic Mobility of Low-Density Electrons in Photoexcited Diamond, Phys. Rev. Appl. 17, L031001 (2022). [2] A. Portier, F. Donatini, D. Dauvergne, M.-L. Gallin-Martel, and J. Pernot, Carrier mobility up to 106 cm2V-1s-1 measured in a single-crystal diamond by the time-of-flight electron-beam-induced current technique, Phys. Rev. Appl. 20, 024037 (2023). [3] K. Konishi, I. Akimoto, H. Matsuoka, V. Djurberg, S. Majdi, J. Isberg, and N. Naka, Low-temperature mobility-lifetime product in synthetic diamond, Appl. Phys. Lett. 117, 212102 (2020). [4] I. Akimoto, T. Suzuki, N. Naka, and H. Matsuoka, Cyclotron resonance imaging at cryogenic temperatures enabled by electric field modification in a microwave cavity, J. Phys. D: Appl. Phys. 58, 025309 (2025).