Physics Chat
Structural Characterisation and Failure Analysis of GaAs/InAs Quantum Dot Lasers
Speaker: Eve Burgess ()
Date: Wednesday 30 October 2024
Time: 14:00
Venue: N/1.32
III-V quantum dot (QD) lasers on silicon (Si) substrates are candidates to act as light sources in photonic integrated circuits (PICs). QD lasers are advantageous compared to their quantum well (QW) counterparts because of their lower threshold current density, reduced sensitivity to temperature and improved tolerance to defects such as dislocations. Despite these advantages, QD lasers on Si are yet to be commercially available as their reliability and failure mechanisms have not been well studied. Furthermore, operation at elevated temperatures is a challenge. In this talk, I will give an overview of the work we are undertaking to try to understand some of the physical mechanisms that cause QD lasers to fail, with a particular focus on devices that are designed to operate at high temperatures. I will introduce some of the techniques we are using to assess defects and failure mechanisms including electron channelling contrast imaging (ECCI).