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Physics Seminar

Selective area epitaxy for electronic and photonic device integration on Si

Speaker: Heinz Schmidt (IBM Research Europe)
Date: Wednesday 15 June 2022
Time: 15:00
Venue: Zoom

Selective growth techniques for semiconductors became very popular thanks to the large interest in nanowire structures and have flourished accordingly over the past 20 years. In this talk I will report on activities that have been pursued in our group using selective area growth in templates for compound semiconductors, mostly III-Vs, on Si for microelectronic (transistor) and photonic (laser) applications. Here key emphasis is given to an epitaxy process with potential towards manufacturability as well. On a materials exploratory side, I will motivate and review our activities on the synthesis of semiconductors in thermodynamic less stable crystal phases.

Short bio: Heinz Schmid holds a position as Senior Engineer at IBM Research Europe, Zurich, Switzerland. His recent research areas comprise the integration of III–V compounds on Si, and the fabrication of scaled III-V devices with a focus on transistors, quantum as well as nanophotonic device concepts.