Physics Seminars
Monolithically integrated InAs/GaAs quantum dot laser on Si for Si photonics
Speaker: Dr Mingchu Tang (University College London)
Date: Thursday 23 May 2024
Time: 15:00
Venue: Queens Building N3.28
The development of data transmission speed through electronic components has been reaching a bottleneck due to the limited bandwidth and power density, despite new nanofabrication method for advanced microprocessor developed with enormous amount of investment. Accordingly, a new technology with advanced Si nanophotonics has been emerged as a promising candidate not only for the next-generation chip-scale data communication network within data centres, but also for the optical computing which has a higher bandwidth, faster speed, and higher power density than the conventional electronic microprocessor. To realise a highly efficient, inter-chip communication on Si platform, a new type of Si-based light-emitting source with ultra-small footprint and ultra-low energy consumption is compulsory. In this talk, I will introduce the recent works of InAs/GaAs quantum dot lasers monolithically integrated on the Si platforms with different design of optical cavities, which lightens the possibility of Si-based optoelectronic integrated circuits.