Physics Chat
III-V-on-silicon photonic integration by direct epitaxy
Speaker: Bogdan-Petrin Ratiu (Dr Qiang Li's group)
Date: Thursday 2 November 2023
Time: 14:00
Venue: TRH Seminar Room 0.01
Integrating III-V light sources onto silicon based photonic integrated circuits has the potential to unlock a vast range of applications from optical communications to 3D sensing and imaging. Despite many successes in the state-of-the-art hybrid lasers enabled by wafer bonding and transfer printing technologies, III-V/Si heteroepitaxy offers scalability up to 300 mm silicon substrates along with benefits from the collective integration process. In the past, progress by direct epitaxy has been impeded by fundamental challenges from materials mismatch and the differences in polarities. Significant progress has been made recently by employing defect-tolerant III-V nanostructures and developing advanced nano-epitaxy. In this talk, I will discuss various techniques to enable III-V growth on the silicon-on-insulator platforms using metal-organic chemical vapour deposition (MOCVD) and their potential for realising monolithically integrated semiconductor lasers with silicon photonic circuits.